Study of a piezoresistive pressure sensor with a thin film of vanadium oxide as active layer
Files
Fritschke_17241600_VanHees_14921600_2022.pdf
Open access - Adobe PDF
- 31.04 MB
Details
- Supervisors
- Faculty
- Degree label
- Abstract
- This master thesis proposes the study of a piezoresistive pressure sensor with a novel design and the piezoresistive characterization of two materials. A first order analytical model of a pressure sensor is studied using MATLAB, and a comparison with a numerical model given by COMSOL Multiphysics is performed. A new way to concentrate the stresses with a patterning of the piezoresistive layer is studied. A process flow for the fabrication of the sensor of interest has been elaborated and partially conducted in a cleanroom environment. Issues that stopped the process are described and analysed. Thin films of vanadium oxides have been deposited using reactive sputtering with different oxygen concentrations. The impact of the deposition parameters on the residual stress and on the gauge factor of the oxides has been investigated. The piezoresistive properties of vanadium oxides and indium gallium zinc oxide are measured through a bending procedure. The highest gauge factors measured for VO2 and IGZO are 61.7 and -419.3 respectively.