Inter-transistor heat transfer in PDSOI and UTBB FDSOI MOSFET technologies

Details

Supervisors

Raskin, Jean-Pierre ; Flandre, Denis

Faculty

Ecole polytechnique de Louvain

Degree label

Master [120] : ingénieur civil physicien

Abstract

While the question of MOSFET self-heating has seen a lot of research efforts in new technologies, the general question of heat transfer between transistors has, to the best knowledge of the author of this document and of his supervisors, not yet been examined. The answer to this question proposed by this master thesis is a 3D classical heat transfer model adapted for small (< [µm]) to medium (< [mm]) scales. To increase the validity of this classical approach as far as possible, adapted parameters for small scale convection, small scale conduction, and anisotropic conduction in composite thin layer structures will be presented. Experimental data will show the final model for 1 [µm] PDSOI Body-Tied MOSFETs on membrane to be highly accurate, and a strong thermal coupling will be both predicted and measured. After its adaptation to 22 [nm] UTBB FDSOI MOSFETs technology, the model predicts an effect too low to be accurately measured for the structure examined. In spite of this, thanks to its full BEOL and substrate modelling, the model in 22 [nm] UTBB FDSOI will lead to interesting results concerning the validity of different boundary conditions that are often used in the literature for complex small scale 2D simulations.