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Modeling of SOI substrate’s nonlinear behavior in RF/mm-wave domain

Courte, Quentin
(2020)

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Courte_03111500_2020.pdf
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Details

Supervisors
Raskin, Jean-Pierre
Faculty
Ecole polytechnique de Louvain
Degree label
Master [120] : ingénieur civil électricien
Abstract
The main objective of this master thesis is to develop a simple nonlinear model that incorporates the nonlinearities created by the Silicon substrate. Both HR- and TR-SOI substrates are concerned. To this end, ATLAS-Silvaco TCAD simulations were realized in order to extract and understand how nonlinearities are created in the two aforementionned substrates. Based on these simulations, a simple I(V) model, that can be imported into EM comercial simulators to predict the level of harmonic distortion inside potentially large and complex structures, from transmission lines to inductors..., was developped.