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Mounzer_48721400_2020.pdf
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- Since its isolation in 2004, graphene has been in the spotlight as it presents uniqueelectrical properties. Hexagonal boron nitride on the other hand, with its lat-tice structure similar to graphene, can be used as an ideal substrate for makinggraphene devices. This allows to create heterostructures of stacked layers of thesematerials. These heterostructures can show interest by revealing, for instance,intrinsic transport properties. Recently, studies predicted interesting capacitorproperties in nanocapacitor made of graphene and h-BN.In this master’s thesis, the fabrication of a nanocapacitor made of graphene/h-BN/graphene is presented. This is made possible by Van der Waals interactionsbetween the layers. Graphene flakes, as well as thin h-BN flakes are fabricated frombulk material, using Scotch tape (exfoliation). The desired samples for buildingthe stack are characterized by atomic force microscopy and Raman spectroscopybeforehand in order to verify the thickness and homogeneity of the samples. Drytransfer of these samples was successfully achieved in a few cases. However, tech-nical issues coming during the process, prevented from fully characterizing andstudying in-depth the final stacks of graphene/h-BN/graphene.