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Radiation effects on ultraviolet enhanced backside-illuminated single photon avalanche diode

Brandsteert, Grégoire
(2024)

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Details

Supervisors
Flandre, Denis ; Francis, Laurent
Faculty
Ecole polytechnique de Louvain
Degree label
Master [120] : ingénieur civil électricien, à finalité spécialisée
Abstract
A backside illuminated Single-photon Avalanche Diode has been developed at UCLouvain, specially tuned to present a high sensitivity for light with ultraviolet and near-UV wavelengths. These devices are particularly effective for applications such as biophotonics or positron emission tomography (PET). Research are also being made regarding the viability of SPADs for space missions. In these different types of applications, the photodetectors are located in harsh environment with ionizing radiations. The aim of this thesis is to assess the damage suffered by SPADs under radiation and to determine if critical changes are made to their characteristics. This analysis is done both by simulation and experimentally, on devices fabricated for the occasion. It is shown that most SPADs present a slight increase in dark current (factor 2) and a shift (either to the left or to the right) in voltage breakdown, ranging from 10s to 100s of mV when irradiated at a dose of 100 krad. These changes are not negligible, but they can be considered minimal when compared to the stronger influence of temperature on these specific parameters.