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Mounzer_48721400_2020.pdf
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- Since its isolation in 2004, graphene has been in the spotlight as it presents unique electrical properties. Hexagonal boron nitride on the other hand, with its lattice structure similar to graphene, can be used as an ideal substrate for making graphene devices. This allows to create heterostructures of stacked layers of these materials. These heterostructures can show interest by revealing, for instance, intrinsic transport properties. Recently, studies predicted interesting capacitor properties in nanocapacitor made of graphene and h-BN. In this master's thesis, the fabrication of a nanocapacitor made of graphene/h-BN/graphene is presented. This is made possible by Van der Waals interactions between the layers. Graphene flakes, as well as thin h-BN flakes are fabricated from bulk material, using Scotch tape (exfoliation). The desired samples for building the stack are characterized by atomic force microscopy and Raman spectroscopy beforehand in order to verify the thickness and homogeneity of the samples. Dry transfer of these samples was successfully achieved in a few cases. However, technical issues coming during the process, prevented from fully characterizing and studying in-depth the final stacks of graphene/h-BN/graphene.
Citations
Mounzer, A. (2020). The thinnest capacitor in the world. https://dial-mem.test.bib.ucl.ac.be/handle/2078.2/16752